For Si chip For GaAs chip Recently in RF power device, packages are required to provide a measure to suppress high heating. We developed packages using Cu laminate H/S (CPC, SPC) that exceed traditional Cu/W & H/S in heat release, and now release them. Features This package uses Cu laminate H/S (CPC, SPC) and takes a measure to help heat release. Applications This package is ready for base station power device LDMOS, GaAs. Specifications Ni/Au plating process is conducted after completing silver soldering of alumina ceramics W/F and H/S (CPC/SPC). H/S supports Cu/W, too. H/S Structure (Cu formation method) Heat conductivity (W) CPC Cu/Cu-Mo/Cu (Rolling) 230 SPC Cu/Cu-Mo/Cu(Silver soldering) 300 Cu/W 10%Cu (Impregnation) 210 Copyright 2003 Sumitomo Metal (SMI) Electronics Devices Inc. All Rights Reserved.